Study of Flow Pattern Defects and Oxidation Induced Stacking Faults in Czochralski Single-Crystal Silicon Growth

This paper emphasizes that the furnace pressure, crucible rotation, and pulling rate have important effects on interstitial oxygen (Oi) concentrations micro-defects during growth in a Czochralski single-crystal silicon (CZ-Si) furnace. Since ingot influences minority carrier lifetime, different set-points of pressure rotation were controlled to achieve degrees Oi. The Oi content has positive correlation with rotation. Various numbers generated under influence rates, owing transformation from liquid solid. sample also underwent Secco etching high-temperature wet oxidation observe defects caused by concentration rate, namely, flow pattern (FPDs) oxidation-induced stacking faults (OISFs). Optical microscopy was employed confirm surface topography, for defect number counting, between lifetime. overall results show lifetime is mainly dominated OISFs high FPDs low content. Therefore, using CZ-Si should be carried out reduce micro-defects.